Infineon BSM50GD120DN2E3226 New Online

Infineon BSM50GD120DN2E3226 New Online Infineon BSM50GD120DN2E3226 New Online Infineon BSM50GD120DN2E3226 New Online Infineon BSM50GD120DN2E3226 New Online

#BSM50GD120DN2E3226 Infineon BSM50GD120DN2E3226 New IGBT Modules N-CH 1.2KV 50A , BSM50GD120DN2E3226 pictures, BSM50GD120DN2E3226 price, #BSM50GD120DN2E3226 supplier
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Manufacturer:Infineon
Product Category:IGBT Modules
Product:IGBT Silicon Modules
Configuration:Hex
Collector– Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.5 V
Continuous Collector Current at 25 C:50 A
Gate-Emitter Leakage Current:200 nA
Pd – Power Dissipation:350 W
Package / Case:EconoPACK 2
Maximum Operating Temperature:+ 150 C
Packaging:Tray
Height:17 mm 
Length:107.5 mm 
Technology:Si 
Width:45.5 mm 
Brand:Infineon Technologies 
Mounting Style:Chassis Mount 
Maximum Gate Emitter Voltage:20 V

IGBT Modules N-CH 1.2KV 50A