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The F3L150R07W2E3_B11 is a power transistor with a collector-emitter Voltage rating of 650V and a continuous DC collector current of 150A. It is designed for use in applications such as 3-level systems, solar applications, and UPS systems.
Its electrical features include increased blocking voltage capability, low inductive design, low switching losses, and low VCEsat. The repetitive peak collector current is 300A, the total power dissipation is 335W, and the gate-emitter peak voltage is ±20V.
The temperature under switching conditions is between -40°C and 150°C, and the storage temperature is between -40°C and 125°C. The weight of the device is 39g.
. Solar Applications
. UPS Systems
• Increased blocking voltage capability to 650V
• Low inductive design
• Low Switching Losses
• Low VCEsat
Kollektor-Emitter-Sperrspannung Collector-emitter voltage Tvj = 25°C VCES 650 V
Kollektor-Dauergleichstrom Continuous DC collector current TC = 25°C, Tvj max = 175°C IC nom 150A
PeriodischerKollektor-Spitzenstrom Repetitive peak collector current tP = 1 ms ICRM 300 A
Gesamt-Verlustleistung Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 335 W
Gate-Emitter-Spitzenspannung Gate-emitter peak voltage VGES ±20 V
Temperatur in Schaltbetrieb Temperature under switching conditions Tvj op -40~150 °C
Lagertemperatur Storage temperature Tstg -40~125 °C
Gewicht Weight 39 g