IXYS P760A06 New Online

IXYS P760A06 New Online IXYS P760A06 New Online IXYS P760A06 New Online IXYS P760A06 New Online IXYS P760A06 New Online IXYS P760A06 New Online

#P760A06 IXYS P760A06 New Bridge Rectifier Diode 3 Phase 145A 1600V V(RRM) Silicon, P760A06 pictures, P760A06 price, #P760A06 supplier
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P760A06 Features / Advantages:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward Voltage drop
● Very low leakage current
● NTC
● X2PT – 2nd generation Xtreme light Punch Through
● Rugged X2PT design results in:
   – short circuit rated for 10 μsec
   – very low gate charge
   – low EMI
   – square RBSOA @ 2x Ic
● Thin wafer technology combined with X2PT design   results in a competitive low Vce(sat) and low    thermal resistance

Maximum ratings and characteristics 
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1600V
Gate-Emitter voltage VGES:±20V
Collector current Ic:180A
Collector current Icp:360A
Collector power dissipation Pc:500W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m

Bridge Rectifier Diode 3 Phase 145A 1600V V(RRM) Silicon