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The GD450HFT120C2S-GB is a power module from STARPOWER SEMICONDUCTOR that contains two IGBTs in a single package. The device has a collector-emitter Voltage rating of 1200V and a continuous collector current of 450A.
It is designed for applications such as general inverters, UPS, motor drives, AC and DC servo drive amplifiers, and uninterruptible power supplies. Its features include low Vce(sat) Trench IGBT technology, 10μs short circuit capability, VCE(sat) with positive temperature coefficient, low inductance case, and fast & soft reverse recovery anti-parallel FWD.
The maximum power dissipation is 2173W and the maximum junction temperature is 175°C. The operating junction temperature is +150°C and the storage temperature is -40 to +125°C.
General Description
STARPOWER IGBT Power MODULE provides ultra
low conduction loss as well as short circuit ruggedness.
They are designed for the applications such as
general inverters and UPS.
Features
. Low VCE(sat) Trench IGBT technology
. 10μs short circuit capability
. VCE(sat) with positive temperature coefficient
. Maximum junction temperature 175°C
. Low inductance case
. Fast & soft reverse recovery anti-parallel FWD
. Isolated copper baseplate using DBC technology
Typical Applications
. Inverter for motor drive
. AC and DC servo drive amplifier
. Uninterruptible power supply
Absolute Maximum Ratings TC=25°C unless otherwise noted
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=100°C :450A
Pulsed Collector Current tp=1ms Icm :900A
Maximum Power Dissipation @ Tj=175°C PD:2173 W
Isolation Voltage RMS,f=50Hz,t=1min:4000V
Maximum Junction Temperature Tjmax :175 °C
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque M6 3.0~5.0 N·m
Weight of Module 300 g
GD450HFT120C2S-GB Video
