Toshiba MG100J2YS1 New Online

Toshiba MG100J2YS1 New Online Toshiba MG100J2YS1 New Online Toshiba MG100J2YS1 New Online Toshiba MG100J2YS1 New Online

#MG100J2YS1 Toshiba MG100J2YS1 New 2IGBT: 100A600V, MG100J2YS1 pictures, MG100J2YS1 price, #MG100J2YS1 supplier
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MG100J2YS1 Description

MG100J2YS1 IGBT Intelligent MODULE; TRANSISTOR MODULE; 25A/1200V/2unit

MG100J2YS1  0.45 lbs

Maximum ratings and characteristics 

.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter Voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic:100A
Collector current Icp:200A
Collector power dissipation Pc:450W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.3 *1 N·m

2IGBT: 100A600V